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Typus
KomplettPlagiat
Bearbeiter
SleepyHollow02
Gesichtet
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Untersuchte Arbeit:
Seite: 35, Zeilen: 2-17
Quelle: Wikipedia Silicon dioxide 2011
Seite(n): 1 (online source), Zeilen: -
3.4.2. Chemistry of silica

Silicon dioxide is formed when silicon is exposed to oxygen (or air). A very shallow layer (approximately 1 nm or 10 Å) of so-called native oxide is formed on the surface when silicon is exposed to air under ambient conditions. Higher temperatures and alternative environments are used to grow well-controlled layers of silicon dioxide on silicon, for example at temperatures between 600 and 1200 °C, using so-called dry or wet oxidation with O2 or H2O, respectively [119]. The depth of the layer of silicon replaced by the dioxide is 44% of the depth of the silicon dioxide layer produced [119].

Alternative methods used to deposit a layer of SiO2 include [120]

  • Low temperature oxidation (400–450 °C) of silane

SiH4 + 2 O2 → SiO2 + 2 H2O.

  • Decomposition of tetraethyl orthosilicate (TEOS) at 680–730 °C

Si(OC2H5)4 → SiO2 + 2 H2O + 4 C2H4.

  • Plasma enhanced chemical vapor deposition using TEOS at about 400 °C

Si(OC2H5)4 + 12 O2 → SiO2 + 10 H2O + 8 CO2.

  • polycondensation of tetraethyl orthosilicate (TEOS) at below 100 °C using amino acid as catalyst.[121]

[119] L. Sunggyu, Encyclopedia of chemical processing. CRC Press. (2006)

[120] R. Doering, Y. Nishi (2007). Handbook of Semiconductor Manufacturing Technolog, Marcel Dekker, New York

[121] A.B.D. Nandiyanto; S.-G Kim; F. Iskandar; and K. Okuyama (2009), Microporous and Mesoporous Materials 120 (3): 447–453

Chemistry

Silicon dioxide is formed when silicon is exposed to oxygen (or air). A very shallow layer (approximately 1 nm or 10 Å) of so-called native oxide is formed on the surface when silicon is exposed to air under ambient conditions. Higher temperatures and alternative environments are used to grow well-controlled layers of silicon dioxide on silicon, for example at temperatures between 600 and 1200 °C, using so-called dry or wet oxidation with O2 or H2O, respectively.[28] The depth of the layer of silicon replaced by the dioxide is 44% of the depth of the silicon dioxide layer produced.[28]

Alternative methods used to deposit a layer of SiO2 include[29]

  • Low temperature oxidation (400–450 °C) of silane SiH4 + 2 O2 → SiO2 + 2 H2O.
  • Decomposition of tetraethyl orthosilicate (TEOS) at 680–730 °C Si(OC2H5)4 → SiO2 + 2 H2O + 4 C2H4.
  • Plasma enhanced chemical vapor deposition using TEOS at about 400 °C Si(OC2H5)4 + 12 O2 → SiO2 + 10 H2O + 8 CO2.
  • Polymerization of tetraethyl orthosilicate (TEOS) at below 100 °C using amino acid as catalyst.[30]

[28] Sunggyu Lee (2006). Encyclopedia of chemical processing. CRC Press. ISBN 0824755634.

[29] Robert Doering, Yoshio Nishi (2007). Handbook of Semiconductor Manufacturing Technology. CRC Press. ISBN 1574446754.

[30] A.B.D. Nandiyanto; S.-G Kim; F. Iskandar; and K. Okuyama (2009). "Synthesis of Silica Nanoparticles with Nanometer-Size Controllable Mesopores and Outer Diameters". Microporous and Mesoporous Materials 120 (3): 447–453. doi:10.1016/j.micromeso.2008.12.019. Innovation, Its Context and Tradition".

Anmerkungen

The source is not mentioned. The references to the literature have also been taken from it.

Sichter
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